AC-coupled GaAs microstrip detectors with a new type of integrated bias resistors

摘要

Full size single-sided GaAs microstrip detectors with integrated couplingcapacitors and bias resistors have been fabricated on 3'' substrate wafers.PECVD deposited SiO_2 and SiO_2/Si_3N_4 layers were used to provide couplingcapacitaces of 32.5 pF/cm and 61.6 pF/cm, respectively. The resistors are madeof sputtered CERMET using simple lift of technique. The sheet resistivity of 78kOhm/sq. and the thermal coefficient of resistance of less than 4x10^-3 /degree C satisfy the demands of small area biasing resistors, working on a widetemperature range.